unisonic technologies co., ltd ufz44 preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2011 unisonic technologies co., ltd qw-r502-515.a 50 amps, 60 volts n-channel power mosfet ? description the utc ufz44 is an n-channel mode power mosfet, using utc?s advanced technology to provide customers with a minimum on-state resistance, superior switching performance, cost-effectiveness and ruggedizd device design. ? features * 50a, 60v, r ds(on) =28m ? @ v gs =10v * high switching speed * improved dv/dt capability ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UFZ44L-TA3-T ufz44g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
ufz44 preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-515.a ver.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v t c =25c (note 2) 50 a continuous , v gs at 10v t c =100c i d 36 a drain current pulsed (note 3) i dm 200 a single pulsed avalanche energy (note 4) e as 100 mj peak diode recovery dv/dt (note 5) dv/dt 4.5 v/ns power dissipation t c =25c p d 150 w linear de - rating factor 1.0 w/c junction temperature t j 150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. current limited by the package, (die current = 51 a). 3. repetitive rating; pulse width limi ted by maximum junction temperature. 4. v dd = 25 v, starting t j = 25 c, l = 44 h, r g = 25 ? , i as = 51 a. 5. i sd 51 a, di/dt 250 a/s, v dd v ds , t j 175 c. ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 1.0 c/w
ufz44 preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-515.a ver.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =1ma 0.060 v/c v ds =60v, v gs =0v 25 drain-source leakage current i dss v ds =48v, v gs =0v, t j =125c 250 a forward v gs =+20v +100 na gate- source leakage current reverse i gss v gs =-20v, -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =31a (note 2) 0.028 ? dynamic parameters input capacitance c iss 1900 pf output capacitance c oss 920 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 170 pf switching parameters total gate charge q g 67 nc gate to source charge q gs 18 nc gate to drain charge q gd v gs =10v, v ds =48v, i d =51a (note 2) 25 nc turn-on delay time t d(on) 14 ns rise time t r 110 ns turn-off delay time t d(off) 45 ns fall-time t f v dd =30v, i d =51a, r g =9.1 ? , r d =0.55 ? (note 2) 92 ns internal drain inductance l d 4.5 nh internal source inductance l s between lead, 6 mm (0.25") from package and center of die contact g (1) s (3) d (2) 7.5 nh source-drain diode ratings and characteristics maximum body-diode continuous current i s 50 a maximum body-diode pulsed current i sm mosfet symbol showing the integral reverse p - n junction diode 200 a drain-source diode forward voltage v sd i s =51a, v gs =0v, t j =25c(note 2) 2.5 v body diode reverse recovery time t rr 120 180 ns body diode reverse recovery charge q rr i f =51a, di/dt=100a/s, t j =25c 0.53 0.80 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. pulse test: pulse width 300s, duty cycle 2%
ufz44 preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-515.a ver.a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
ufz44 preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-515.a ver.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
ufz44 preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-515.a ver.a
ufz44 preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-515.a ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
